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Effects of UV-ozone...
Effects of UV-ozone treatment on the performance of deep-ultraviolet photodetectors based on ZnGa2O4 epilayers
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- Horng, Ray-Hua (author)
- Natl Yang Ming Chiao Tung Univ, Taiwan
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- Li, Yun-Sheng (author)
- Natl Yang Ming Chiao Tung Univ, Taiwan
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- Lin, Kun-Lin (author)
- Taiwan Semicond Res Inst TSRI, Taiwan
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- Tarntair, Fu-Gow (author)
- Natl Yang Ming Chiao Tung Univ, Taiwan
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- Nittayakasetwat, Siri (author)
- Natl Yang Ming Chiao Tung Univ, Taiwan
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- Hsiao, Ching-Lien (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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(creator_code:org_t)
- ELSEVIER SCIENCE SA, 2022
- 2022
- English.
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In: Materials Chemistry and Physics. - : ELSEVIER SCIENCE SA. - 0254-0584 .- 1879-3312. ; 292
- Related links:
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https://liu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- ZnGa2O4 epilayers have been grown on sapphire using the metalorganic chemical vapor deposition system. However, there is a trade-off between high conductivity and large defect density (oxygen vacancies) with the growth time of the growth of ZnGa2O4 epilayers. The ultraviolet (UV)-ozone treatment on the ZnGa2O4 epilayer at 100. C was proposed to reduce the number of oxygen vacancies in ZnGa2O4. The effect of UV-ozone treatment on the performance of ZnGa2O4 metal-semiconductor-metal (MSM) photodetector (PD) was evaluated. X-ray photoelectron spectroscopy analysis showed a decrease in the number of oxygen vacancies after UV-ozone treatment of ZnGa2O4. The measured lattice parameter near the surface around 10 nm of untreated ZnGa2O4 was 8.3434 +/- 0.0120 angstrom and increased slightly to 8.3775 +/- 0.0083 A. after UV-ozone treatment due to the decrease in oxygen vacancies. The dark current (at 5 V) of ZnGa2O4 PD was significantly reduced from 251 to 20.2 pA before and after UV-ozone treatment; it resulted in a substantial one-order enhancement in the on/off ratio of the PDs from 2.7 x 10(5) and 2.15 x 10(6) after the UV-ozone treatment. Furthermore, the rejection ratio also improved between 240 and 470 nm from 35 to 84 after UV-ozone treatment. The relationship between photocurrent and light intensity and the improvement in raising and falling time also showed the reduced density of trap states by UV-ozone treatment. This indicates that UV-ozone treatment can enhance the characteristics of ZnGa2O4 PDs for UV sensing applications.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
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