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Homogeneous high In...
Homogeneous high In content InxGa1-x N films by supercycle atomic layer deposition
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- Hsu, Chih-Wei (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Martinovic, Ivan (författare)
- Linköpings universitet,Tekniska fakulteten,Halvledarmaterial
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- Magnusson, Roger (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Bakhit, Babak (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Palisaitis, Justinas (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Persson, Per O A (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Rouf, Polla (författare)
- Linköpings universitet,Kemi,Tekniska fakulteten
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- Pedersen, Henrik (författare)
- Linköpings universitet,Kemi,Tekniska fakulteten
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(creator_code:org_t)
- American Institute of Physics (AIP), 2022
- 2022
- Engelska.
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Institute of Physics (AIP). - 0734-2101 .- 1520-8559. ; 40:6
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- InxGa1-x N is a strategically important material for electronic devices given its tunable bandgap, modulated by the In/Ga ratio. However, current applications are hindered by defects caused by strain relaxation and phase separation in the material. Here, we demonstrate growth of homogeneous InxGa1-x N films with 0.3 < x < 0.8 up to similar to 30 nm using atomic layer deposition (ALD) with a supercycle approach, switching between InN and GaN deposition. The composition is uniform along and across the films, without signs of In segregation. The InxGa1-x N films show higher In-content than the value predicted by the supercycle model. A more pronounced reduction of GPC(InN) than GPC(GaN) during the growth processes of InN and GaN bilayers is concluded based on our analysis. The intermixing between InN and GaN bilayers is suggested to explain the enhanced overall In-content. Our results show the advantage of ALD to prepare high-quality InxGa1-x N films, particularly with high In-content, which is difficult to achieve with other growth methods.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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