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Vanadium in silicon...
Vanadium in silicon carbide: telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions
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- Astner, Thomas (författare)
- Inst Quantum Opt & Quantum Informat IQOQI Vienna, Austria; Univ Wien, Austria
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- Koller, Philipp (författare)
- Inst Quantum Opt & Quantum Informat IQOQI Vienna, Austria; Univ Wien, Austria; Univ Vienna, Austria; Univ Vienna, Austria
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- Gilardoni, Carmem M. (författare)
- Univ Groningen, Netherlands
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- Hendriks, Joop (författare)
- Univ Groningen, Netherlands
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- Son, Nguyen Tien (författare)
- Univ Groningen, Netherlands
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- Ivanov, Ivan Gueorguiev (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Ul-Hassan, Jawad (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- van der Wal, Caspar H. (författare)
- Univ Groningen, Netherlands
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- Trupke, Michael (författare)
- Inst Quantum Opt & Quantum Informat IQOQI Vienna, Austria; Univ Wien, Austria
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(creator_code:org_t)
- IOP Publishing Ltd, 2024
- 2024
- Engelska.
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Ingår i: QUANTUM SCIENCE AND TECHNOLOGY. - : IOP Publishing Ltd. - 2058-9565. ; 9:3
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, several key characteristics of this defect family including their spin relaxation lifetime (T1), charge state dynamics, and level structure are not fully understood. In this work, we determine the T1 of an ensemble of vanadium defects, demonstrating that it can be greatly enhanced at low temperature. We observe a large spin contrast exceeding 90% and long spin-relaxation times of up to 25 s at 100 mK, and of order 1 s at 1.3 K. These measurements are complemented by a characterization of the ensemble charge state dynamics. The stable electron spin furthermore enables high-resolution characterization of the systems' hyperfine level structure via two-photon magneto-spectroscopy. The acquired insights point towards high-performance spin-photon interfaces based on vanadium in SiC.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- SiC; vanadium; spin centers; spin lifetime; optical spectroscopy; quantum memory
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