EPR identification of intrinsic defects in SiC

The structure determination of intrinsic defects in 4H-SiC, 6H-SiC, and 3C-SiC by means of EPR is based on measuring the angular dependence of the 29Si/13C hyperfine (HF) satellite lines, from which spin densities, sp-hybrid ratio, and p-orbital direction can be determined over major atoms comprising a defect. In most cases, not only the assignment of the variety due to the inequivalent sites (h- and k-sites in 4H-SiC) but also the identification of the defect species is accomplished through the comparison of the obtained HF parameters with those obtained from first principles calculations. Our works of identifying vacancy-related defects such as the monovacancies, divacancies, and antisite-vacancy pairs in 4H-SiC are reviewed. In addition, it is demonstrated that the observation of the central line of the TV2a center of S = 3/2 has been achieved by pulsed-ELDOR. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

Umeda, T. (author)
Mizuochi, N. (author)
Nguyen, Son Tien,1953-Linköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)nguso90 (author)
Janzén, Erik,1954-Linköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)erija14 (author)
Ohshima, T. (author)
Linköpings universitetTekniska högskolan (creator_code:org_t)

In:Physica status solidi. B, Basic research: Wiley245:7, s. 1298-13140370-19721521-3951

By the author/editor: Isoya, J.; Umeda, T.; Mizuochi, N.; Nguyen, Son Tien ...; Janzén, Erik, 19 ...; Ohshima, T.

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