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EPR identification ...
EPR identification of intrinsic defects in SiC
- Article/chapterEnglish2008
Publisher, publication year, extent ...
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Wiley,2008
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printrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:liu-43503
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-43503URI
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https://doi.org/10.1002/pssb.200844209DOI
Supplementary language notes
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Language:English
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Summary in:English
Part of subdatabase
Classification
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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The structure determination of intrinsic defects in 4H-SiC, 6H-SiC, and 3C-SiC by means of EPR is based on measuring the angular dependence of the 29Si/13C hyperfine (HF) satellite lines, from which spin densities, sp-hybrid ratio, and p-orbital direction can be determined over major atoms comprising a defect. In most cases, not only the assignment of the variety due to the inequivalent sites (h- and k-sites in 4H-SiC) but also the identification of the defect species is accomplished through the comparison of the obtained HF parameters with those obtained from first principles calculations. Our works of identifying vacancy-related defects such as the monovacancies, divacancies, and antisite-vacancy pairs in 4H-SiC are reviewed. In addition, it is demonstrated that the observation of the central line of the TV2a center of S = 3/2 has been achieved by pulsed-ELDOR. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
Subject headings and genre
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NATURAL SCIENCES
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NATURVETENSKAP
Added entries (persons, corporate bodies, meetings, titles ...)
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Umeda, T.
(author)
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Mizuochi, N.
(author)
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Nguyen, Son Tien,1953-Linköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)nguso90
(author)
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Janzén, Erik,1954-Linköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)erija14
(author)
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Ohshima, T.
(author)
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Linköpings universitetTekniska högskolan
(creator_code:org_t)
Related titles
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In:Physica status solidi. B, Basic research: Wiley245:7, s. 1298-13140370-19721521-3951
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