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Nature and Formatio...
Nature and Formation of Non-Radiative Defects in GaNAs and InGaAsN
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- Chen, Weimin, 1959- (författare)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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Thinh, N. Q. (författare)
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- Buyanova, Irina, 1960- (författare)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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Hai, P. N. (författare)
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Xin, H. P. (författare)
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Tu, C. W. (författare)
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Li, Wei (författare)
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Pessa, M. (författare)
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(creator_code:org_t)
- Materials Research Society Symposium - Proceedings, Vol. 692 : MRS, 2002
- 2002
- Engelska.
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Ingår i: MRS Fall Meeting 2001,2001. - Materials Research Society Symposium - Proceedings, Vol. 692 : MRS. ; , s. 67-72
- Relaterad länk:
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http://www.mrs.org/s...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- The optically detected magnetic resonance (ODMR) technique has been employed to examine the nature and formation mechanism of non-radiative defects in GaNAs and InGaAsN. In both alloys, two defects were observed and were shown to be deep-level, non-radiative recombination centers. One of the defects has been identified as a complex involving an AsGa antisite. These two defects gain more importance with increasing N composition up to 3%, presumably due to an increase in their concentration. With a further higher N composition, the defects start to lose importance in carrier recombination that is attributed to an increasingly important role of other new non-radiative channels introduced with a high N composition. On the other hand, effect of In composition up to 3% seems to be only marginal. Both defects were shown to be preferably introduced in the alloys during low-temperature growth by molecular beam epitaxy (MBE), but can be rather efficiently removed by post-growth rapid thermal annealing.
Nyckelord
- NATURAL SCIENCES
- NATURVETENSKAP
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Chen, Weimin, 19 ...
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Thinh, N. Q.
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Buyanova, Irina, ...
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Hai, P. N.
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Xin, H. P.
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Tu, C. W.
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visa fler...
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Li, Wei
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Pessa, M.
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visa färre...
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Linköpings universitet