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P-N defect in GaNP ...
P-N defect in GaNP studied by optically detected magnetic resonance
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- Chen, Weimin (författare)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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Thinh, N.Q. (författare)
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- Vorona, Igor (författare)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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- Buyanova, Irina (författare)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Xin, H.P. (författare)
- Department of Electrical Engineering, University of California, San Diego, CA 92093-0407, United States
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- Tu, C.W. (författare)
- Department of Electrical Engineering, University of California, San Diego, CA 92093-0407, United States
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(creator_code:org_t)
- Elsevier BV, 2003
- 2003
- Engelska.
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Ingår i: Proceedings of the 22nd International Conference on Defects in Semiconductors. - : Elsevier BV. ; , s. 399-402
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We provide experimental evidence for an intrinsic defect in GaNP from optically detected magnetic resonance (ODMR). This defect is identified as a P-N complex, exhibiting hyperfine structure due to interactions with a nuclear spin I=12 of one P atom and also a nuclear spin I=1 due to one N atom. The introduction of the defect is assisted by the incorporation of N within the studied N composition range of up to 3.1%, under non-equilibrium growth conditions during gas-source molecular beam epitaxy. The corresponding ODMR spectrum was found to be isotropic, suggesting an A1 symmetry of the defect state. The localization of the electron wave function at the P-N defect in GaNP is found to be even stronger than that for the isolated PGa antisite in its parent binary compound GaP. © 2003 Elsevier B.V. All rights reserved.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- GaNP
- Identification
- Intrinsic defect
- ODMR
- TECHNOLOGY
- TEKNIKVETENSKAP
- Semiconductor physics
- Halvledarfysik
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)