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Simple model for calculation of SiC epitaxial layers growth rate in vacuum.
- Davydov, SY (author)
- Savkina, NS (author)
-
- Lebedev, Alexander (author)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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- 2004
- 2004
- English.
- In: Materials Science Forum, Vols. 457-460. ; , s. 249-252
- Conference paper (peer-reviewed)
Abstract
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- Within the frame of a simple model, based on Hertz-Knudsen equation with account of temperature dependant sticking coefficient, temperature dependence of silicon carbide epitaxial layers growth rate in vacuum has been calculated. Calculation results are in a good agreement with the experimental data.
Keyword
- simple model
- growth rate
- sublimation epitaxy
- vacuum
- SiC
- TECHNOLOGY
- TEKNIKVETENSKAP
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- ref (subject category)
- kon (subject category)
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