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Impact of plasma et...
Impact of plasma etching on the noise performance of Ti/p-Si and Ti/p-Si1-xGex Schottky contacts
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- Ouacha, H (författare)
- Chalmers Univ Technol, Dept Phys, MC2, S-41296 Gothenburg, Sweden Univ Gothenburg, S-41296 Gothenburg, Sweden Natl Def Res Estab, S-58111 Linkoping, Sweden Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa
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- Mamor, M (författare)
- Chalmers Univ Technol, Dept Phys, MC2, S-41296 Gothenburg, Sweden Univ Gothenburg, S-41296 Gothenburg, Sweden Natl Def Res Estab, S-58111 Linkoping, Sweden Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa
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Willander, M (författare)
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Ouacha, A (författare)
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- Auret, FD (författare)
- Chalmers Univ Technol, Dept Phys, MC2, S-41296 Gothenburg, Sweden Univ Gothenburg, S-41296 Gothenburg, Sweden Natl Def Res Estab, S-58111 Linkoping, Sweden Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa
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(creator_code:org_t)
- 2000
- 2000
- Engelska.
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Ingår i: Journal of Applied Physics. - 0021-8979 .- 1089-7550. ; 87:8, s. 3858-3863
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- The effect of plasma etching on the noise properties of Ti/p-Si and Ti/p-Si1-xGex (with x=0.05) Schottky junctions has been investigated. The noise measurements were performed over a temperature range of 77-300 K at frequencies of 10-100 kHz. The main noise source observed in these diodes during argon plasma sputter etching was attributed to the generation-recombination noise. From the analysis of the noise data, we have determined the interface state density and evaluated the introduced damage. The results indicate two optimum operating temperatures where low-noise level can be achieved. Furthermore, the activation energies of trap levels have been extracted by using noise spectroscopy (NS) and compared with those measured by deep-level transient spectroscopy (DLTS). We found two additional trap states using NS not detected by DLTS measurements. Finally, a noise comparison between Ti/p-Si and Ir/p-Si fabricated on an unetched substrate has been made. (C) 2000 American Institute of Physics. [S0021-8979(00)00608-3].
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