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Identification of a...
Identification of a Frenkel-pair defect in electron-irradiated 3C SiC
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- Nguyen, Son Tien (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan,Semiconductor materials
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- Janzén, Erik (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan,Semiconductor materials
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- Isoya, J. (author)
- University of Tsukuba
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- Morishita, N. (author)
- Japan Atomic Energy Agency
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- Hanaya, H. (author)
- Japan Atomic Energy Agency
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- Takizawa, H. (author)
- Japan Atomic Energy Agency
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- Ohshima, T. (author)
- Japan Atomic Energy Agency
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- Gali, Adam (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- 2009
- 2009
- English.
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In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 80, s. 125201-
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Anelectron paramagnetic resonance (EPR) spectrum labeled LE1 was observed inn-type 3C SiC after electron irradiation at low temperatures (~80–100 K).A hyperfine interaction with four nearest C neighbors similar tothat of the well-known silicon vacancy in the negative chargestate was observed, but the LE1 center has a lowersymmetry, C2v. Supercell calculations of different configurations of silicon vacancy-interstitialFrenkel-pairs, VSi-Sii, were performed showing that pairs with a nearestneighbor Si interstitial are unstable—VSi and Sii will automatically recombine—whereaspairs with a second neighbor Sii are stable. Comparing thedata obtained from EPR and supercell calculations, the LE1 centeris assigned to the Frenkel-pair between VSi and a secondneighbor Sii interstitial along the [100] direction in the 3+charge state, V-Si. In addition, a path for the migrationof Si was found in 3C SiC. In samples irradiatedat low temperatures, the LE1 Frenkel-pair was found to bethe dominating defect whereas EPR signals of single vacancies werenot detected. The center disappears after warming up the samplesto room temperature.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- electron beam effects
- Frenkel defects
- hyperfine interactions
- interstitials
- paramagnetic resonance
- silicon compounds
- wide band gap semiconductors
- Semiconductor physics
- Halvledarfysik
Publication and Content Type
- ref (subject category)
- art (subject category)
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