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Macrodefects in cub...
Macrodefects in cubic silicon carbide crystals
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- Jokubavicius, Valdas (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Palisaitis, Justinas (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Vasiliauskas, Remigijus (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Yakimova, Rositsa (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Syväjärvi, Mikael (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- Transtec Publications; 1999, 2010
- 2010
- English.
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In: Materials Science Forum, Vols. 645-648. - : Transtec Publications; 1999. ; , s. 375-378
- Related links:
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https://liu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Subject headings
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- Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 mu m/h with the thickness of the crystals from 190 to 230 mu m, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal growth. The highest concentration of macrodefects appears in the vicinity of the domain in samples grown under high temperature gradient: and fastest temperature ramp up. The formation of macrodefects was related to carbon deficiency which appear due to high Si/C ratio which is used to enable formation of the 3C-SiC polytype.
Keyword
- 3C-SiC crystals; sublimation epitaxy; voids
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- kon (subject category)
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