Room temperature spin filtering effect in GaNAs: Role of hydrogen

• Effects of hydrogen on the recently discovered defect-engineered spin filtering in GaNAs are investigated by optical spin orientation and optically detected magnetic resonance. Post-growth hydrogen treatments are shown to lead to nearly complete quenching of the room-temperature spin-filtering effect in both GaNAs epilayers and GaNAs/GaAs multiple quantum wells, accompanied by a reduction in concentrations of Ga(i) interstitial defects. Our finding provides strong evidence for efficient hydrogen passivation of these spin-filtering defects, likely via formation of complexes between Gai defects and hydrogen, as being responsible for the Observed strong suppression of the spin-filtering effect after the hydrogen treatments.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

gallium arsenide

gallium compounds

hydrogen

III-V semiconductors

interstitials

magnetic resonance

passivation

quenching (thermal)

semiconductor epitaxial layers

semiconductor quantum wells

wide band gap semiconductors

TECHNOLOGY

TEKNIKVETENSKAP

Publication and Content Type

ref (subject category)

art (subject category)