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Electrical properti...
Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures
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- Shtepliuk, I (author)
- Kiev, Ukraine
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- Khranovskyy, Volodymyr (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Lashkarev, G (author)
- Kiev, Ukraine
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- Khomyak, V. (author)
- Chernivtsi, Ukraine
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- Lazorenko, V (author)
- Kiev, Ukraine
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- Ievtushenko, A (author)
- Kiev, Ukraine
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- Syväjärvi, Mikael (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Jokubavicius, Valdas (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Yakimova, Rositsa (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- Elsevier BV, 2013
- 2013
- English.
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In: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 81, s. 72-77
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https://liu.diva-por... (primary) (Raw object)
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http://liu.diva-port...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- We report the low-temperature (250 °C) fabrication of n-ZnCdO/p-SiC heterostructures by direct current magnetron sputtering (DC MS) technique. As-grown heterostructures exhibit diode characteristics: current–voltage measurements showed a typical rectifying characteristic of a p–n junction and the presence of series resistance. It is found that the turn-on voltage of heterostructures depends on the acceptor concentration in p-SiC. Via Cd doping of ZnO the energy barrier for holes can be lowered, which promotes the hole injection from the p-type layer to the n-type layer as well as favors the radiative recombination in the n-ZnCdO layer.
Publication and Content Type
- ref (subject category)
- art (subject category)
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