Sökning: onr:"swepub:oai:DiVA.org:ltu-14014" >
Photo-dissociation ...
Photo-dissociation of hydrogen passivated dopants in gallium arsenide
-
- Tong, Longyu (författare)
- National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork
-
Larsson, Andreas (författare)
-
- Nolan, Michael (författare)
- National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork
-
visa fler...
-
- Murtagh, MArtin E. (författare)
- National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork
-
- Greer, James C. (författare)
- National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork
-
- Barbe, Michel (författare)
- Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 1 Place A. Briand, 92195 Meudon Cedex
-
- Bailly, Francis (författare)
- Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 1 Place A. Briand, 92195 Meudon Cedex
-
- Chevallier, Jacques (författare)
- Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 1 Place A. Briand, 92195 Meudon Cedex
-
- Silvestre, F.S. (författare)
- IEMN, UMR CNRS 9929, BP69, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex
-
- Loridant-Bernard, D. (författare)
- IEMN, UMR CNRS 9929, BP69, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex
-
- Constant, E. (författare)
- IEMN, UMR CNRS 9929, BP69, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex
-
- Constant, F.M. (författare)
- Laboratoire de Spectrochimie Infrarouge et Raman, UPR2631L CNRS, Université des Sciences et Techniques de Lille
-
visa färre...
-
National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 1 Place A Briand, 92195 Meudon Cedex (creator_code:org_t)
- 2002
- 2002
- Engelska.
-
Ingår i: Nuclear Instruments and Methods in Physics Research Section B. - 0168-583X .- 1872-9584. ; 186:1-4, s. 234-239
- Relaterad länk:
-
https://urn.kb.se/re...
-
visa fler...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the Si Ga-H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-dissociation of C As-H is not observed for photon energies up to 5.58 eV. This fundamental difference in the photo-dissociation behavior between the two dopants is explained in terms of the localized excitation energies about the Si-H and C-H bonds.
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas
- Av författaren/redakt...
-
Tong, Longyu
-
Larsson, Andreas
-
Nolan, Michael
-
Murtagh, MArtin ...
-
Greer, James C.
-
Barbe, Michel
-
visa fler...
-
Bailly, Francis
-
Chevallier, Jacq ...
-
Silvestre, F.S.
-
Loridant-Bernard ...
-
Constant, E.
-
Constant, F.M.
-
visa färre...
- Artiklar i publikationen
-
Nuclear Instrume ...
- Av lärosätet
-
Luleå tekniska universitet