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Structural and elec...
Structural and electrical properties of threading dislocations in GaN
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Elsner, J. (författare)
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- Jones, R. (författare)
- Department of Physics, University of Exeter
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Sitch, P.K. (författare)
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- Frauenheim, Th. (författare)
- Theoretische Physik III, TU Chemnitz
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- Heggie, M.I. (författare)
- CPES, University of Sussex, Falmer, Brighton
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- Öberg, Sven (författare)
- Luleå tekniska universitet,Matematiska vetenskaper
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- Briddon, P.R. (författare)
- Department of Physics, University of Newcastle
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(creator_code:org_t)
- Trans Tech Publications Inc. 1997
- 1997
- Engelska.
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Ingår i: Defects in semiconductors. - : Trans Tech Publications Inc.. ; , s. 1203-1210
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
Stäng
- The atomic structures and electrical properties for threading screw and threading edge dislocations of wurtzite GaN are calculated within the local-density approximation. Both dislocations are electrically inactive with a band gap free from deep levels. These results are understood to arise from relaxed core structures which are similar to (1010) surfaces. The threading screw dislocations are found to be stable with an open-core whereas the threading edge dislocations possess filled cores.
Ämnesord
- NATURVETENSKAP -- Matematik -- Beräkningsmatematik (hsv//swe)
- NATURAL SCIENCES -- Mathematics -- Computational Mathematics (hsv//eng)
Nyckelord
- Scientific Computing
- Teknisk-vetenskapliga beräkningar
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)