E center in silicon has a donor level in the band gap

Larsen, A. NylandstedInstitute of Physics and Astronomy, University of Aarhus (författare)

Validerad; 2006; 20070214 (kani)
It has been an accepted fact for more than 40 years that the E center in Si (the group-V impurity-vacancy pair)-one of the most studied defects in semiconductors-has only one energy level in the band gap: namely, the acceptor level at about 0.45 eV below the conduction band. We now demonstrate that it has a second level, situated in the lower half of the band gap at 0.27 eV above the valence band. The existence of this level, having a donor character, is disclosed by a combination of different transient-capacitance techniques and electronic-structure calculations. The finding seriously questions some diffusion-modeling approaches performed in the past.

Mesli, A.Institut d'Electronique du Solide et des Systèmes, CNRS/ULP, Strasbourg (författare)
Nielsen, K. BondeInstitute of Physics and Astronomy, University of Aarhus (författare)
Nielsen, H. KortegaardInstitute of Physics and Astronomy, University of Aarhus (författare)
Dobaczewski, L.Institute of Physics, Polish Academy of Sciences (författare)
Adey, J.School of Physics, University of Exeter (författare)
Jones, R.School of Physics, University of Exeter (författare)
Palmer, D.W.School of Physics, University of Exeter (författare)
Briddon, P.R.School of Natural Science, University of Newcastle upon Tyne (författare)
Öberg, SvenLuleå tekniska universitet,Matematiska vetenskaper(Swepub:ltu)oberg (författare)
Institute of Physics and Astronomy, University of AarhusInstitut d'Electronique du Solide et des Systèmes, CNRS/ULP, Strasbourg (creator_code:org_t)

Av författaren/redakt...: Larsen, A. Nylan ...; Mesli, A.; Nielsen, K. Bond ...; Nielsen, H. Kort ...; Dobaczewski, L.; Adey, J.; visa fler...; Jones, R.; Palmer, D.W.; Briddon, P.R.; Öberg, Sven; visa färre...

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