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Optical and electri...
Optical and electrical properties of vanadium and erbium in 4H-SiC
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- Prezzi, D. (författare)
- School of Physics, University of Exeter
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- Eberlein, T.A.G. (författare)
- School of Physics, University of Exeter
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- Filhol, J.S. (författare)
- School of Physics, University of Exeter
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- Jones, R. (författare)
- School of Physics, University of Exeter
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- Shaw, M.J. (författare)
- School of Natural Science, University of Newcastle upon Tyne
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- Briddon, P.R. (författare)
- School of Natural Science, University of Newcastle upon Tyne
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- Öberg, Sven (författare)
- Luleå tekniska universitet,Matematiska vetenskaper
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(creator_code:org_t)
- 2004
- 2004
- Engelska.
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 69:19, s. 193202-1
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Local-density-functional calculations are carried out on vanadium and erbium centers in 4H-SiC. Particular attention is paid to their electrical and optical properties. We find that both V and Er lie at Si sites and can exist in three charge states with deep donor and acceptor levels. While isolated VSi possesses intra-d and ionization induced optical transitions around 0.94 and 2.9 eV respectively, the intense and temperature stable intra-f optical transitions due to Er are unlikely to be due to an isolated Er defect. It is suggested that both impurities can trap H and N forming complexes which may limit the electrical efficiency of V and act as Er related exciton traps.
Ämnesord
- NATURVETENSKAP -- Matematik -- Beräkningsmatematik (hsv//swe)
- NATURAL SCIENCES -- Mathematics -- Computational Mathematics (hsv//eng)
Nyckelord
- Scientific Computing
- Teknisk-vetenskapliga beräkningar
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