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Impact of package p...
Impact of package parasitics on switching performance
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- Kostov, Konstantin Stoychev (författare)
- RISE,Acreo
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- Lim, Jang-Kwon (författare)
- RISE,Acreo
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- Zhang, Yafan (författare)
- RISE,Acreo
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- Bakowski, Mietek (författare)
- RISE,Acreo
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(creator_code:org_t)
- Trans Tech Publications Ltd, 2016
- 2016
- Engelska.
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Ingår i: Materials Science Forum. - : Trans Tech Publications Ltd. - 9783035710427 ; , s. 1057-1060
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- The package parasitics are a serious obstacle to the high-speed switching, which is necessary in order to reduce the switching power losses or reduce the size of power converters. In order to design new packages suitable for Silicon Carbide (SiC) power transistors, it is necessary to extract the parasitics of different packages and be able to predict the switching performance of the power devices placed in these packages. This paper presents two ways of simulating the switching performance in a half-bridge power module with SiC MOSFETs. The results show that the parasitic inductances in the power module slow down the switching, lead to poor current sharing, and together with the parasitic capacitances lead to oscillations. These negative effects can cause failures, increased losses, and electromagnetic compatibility issues.
Ämnesord
- NATURVETENSKAP -- Data- och informationsvetenskap (hsv//swe)
- NATURAL SCIENCES -- Computer and Information Sciences (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Module
- MOSFET
- Parasitic inductance
- Parasitics
- Silicon Carbide (SiC)
- Switching
- Capacitance
- Electric power systems
- Inductance
- MOSFET devices
- Power semiconductor devices
- Silicon
- Silicon carbide
- MOS-FET
- Parasitic inductances
- Silicon carbides (SiC)
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)
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