Temperature and injection dependence of the Shockley-Read-Hall lifetime in electron-irradiated p-type silicon

• The Shockley-Read-Hall (SRH) carrier lifetime in electron-irradiated low-doped p-type silicon was measured at different injection levels and various temperatures. The lifetime under high-level injection was determined using the open-circuit carrier decay

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

PROTON IRRADIATION; TRANSIENT SPECTROSCOPY; CARRIER LIFETIME; RESISTIVITY; ENERGY; SI

Electronics

Elektronik

Publication and Content Type

ref (subject category)

art (subject category)