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Barrier-free semime...
Barrier-free semimetallic PtSe2 contact formation in two-dimensional PtSe2/PtSe2 homostructure for high-performance field-effect transistors
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- Kim, Yun-Ho (författare)
- Chung Ang Univ, Dept Phys, Seoul 06974, South Korea.
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- Kang, Min-Sung (författare)
- Chung Ang Univ, Dept Phys, Seoul 06974, South Korea.
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- Choi, Jae Won (författare)
- Chung Ang Univ, Dept Phys, Seoul 06974, South Korea.
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- Lee, Won-Yong (författare)
- Uppsala universitet,Fasta tillståndets elektronik,Uppsala Univ, Dept Elect Engn, Div Solid State Elect, Uppsala, Sweden.
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- Kim, Min-Jeong (författare)
- Chung Ang Univ, Dept Phys, Seoul 06974, South Korea.
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- Park, No-Won (författare)
- Chung Ang Univ, Dept Phys, Seoul 06974, South Korea.
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- Yoon, Young-Gui (författare)
- Chung Ang Univ, Dept Phys, Seoul 06974, South Korea.
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- Kim, Gil-Sung (författare)
- Chung Ang Univ, Dept Phys, Seoul 06974, South Korea.
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- Lee, Sang-Kwon (författare)
- Chung Ang Univ, Dept Phys, Seoul 06974, South Korea.
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Chung Ang Univ, Dept Phys, Seoul 06974, South Korea Fasta tillståndets elektronik (creator_code:org_t)
- ELSEVIER, 2023
- 2023
- Engelska.
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Ingår i: Applied Surface Science. - : ELSEVIER. - 0169-4332 .- 1873-5584. ; 638
- Relaterad länk:
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https://doi.org/10.1...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The search for low-resistance metal contacts on two-dimensional (2D) layered transition metal dichalcogenide (TMDC) materials for high-performance electronic devices remains challenging owing to the lack of interfacial bonding on the surface and a strong Fermi-level pinning effect. In this study, we demonstrate a high-performance 2D large-area homostructured PtSe2/PtSe2 field-effect transistor (FET) by introducing a Schottky-barrier-free and semimetallic PtSe2 film (top layer) as an ohmic contact to semiconducting 2D PtSe2 films (bottom layer) via the wet-transfer method. We successfully improved the current on/off ratio of homostructured 2D/2D PtSe2/PtSe2 FET by more than approximately twofold increase compared to the PtSe2 FET with Pt contacts owing to the barrier-free homojunction PtSe2 layer. Our finding represents a significant achievement in obtaining highperformance electronic devices with barrier-free contacts on homostructured PtSe2 FETs and paves the way toward a promising strategy for wafer-scale 2D TMDC electronic devices.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- Platinum diselenide
- Transition metal dichalcogenide
- van der Waals contacts
- Homostructure
- Schottky -barrier -free contact
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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