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Two Ultra-Low Power...
Two Ultra-Low Power MM-Wave Push-Pull VCOs in FD-SOI CMOS
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- Forsberg, Therese (författare)
- Lund University,Lunds universitet,Integrerade elektroniksystem,Forskargrupper vid Lunds universitet,Integrated Electronic Systems,Lund University Research Groups
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- Wernehag, Johan (författare)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Integrerade elektroniksystem,Forskargrupper vid Lunds universitet,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Integrated Electronic Systems,Lund University Research Groups
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- Sjöland, Henrik (författare)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Integrerade elektroniksystem,Forskargrupper vid Lunds universitet,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Integrated Electronic Systems,Lund University Research Groups
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- Törmänen, Markus (författare)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Integrerade elektroniksystem,Forskargrupper vid Lunds universitet,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Integrated Electronic Systems,Lund University Research Groups
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(creator_code:org_t)
- 2018
- 2018
- Engelska 3 s.
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Ingår i: Proceedings of 2018 Asia-Pacific Microwave Conference. - 9784902339451 - 9781538621844 ; , s. 1130-1132
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.2...
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Abstract
Ämnesord
Stäng
- Two low-power mm-wave voltage controlled oscillators (VCOs) designed in a 28-nm fully-depleted silicon-on-insulator (FD-SOI) CMOS process are demonstrated, using a push-pull differential architecture. Measurement show that the first VCO has a 10.8% tuning rage centered at 30.3 GHz, and the second has a 8.9 % tuning range at 58.7 GHz. The 30 GHz VCO consumes 1.06 mW from a 1 V supply, and has a -119 dBc/Hz phase noise at 10 MHz offset, achieving a figure of merit of -188.4 dB. The 60 GHz VCO consumes 1.35 mW and has a -111.9 dBc/Hz phase noise at 10 MHz offset, achieving a figure of merit of -186.2 dB. Their active areas are 0.03 mm 2 and 0.096 mm 2 respectively.
- Two low-power mm-wave voltage controlled oscillators (VCOs) designed in a 28-nm fully-depleted silicon-on-insulator (FD-SOI) CMOS process are demonstrated, using a push-pull differential architecture. Measurement show that the first VCO has a 10.8% tuning rage centered at 30.3 GHz, and the second has a 8.9 % tuning range at 58.7 GHz. The 30 GHz VCO consumes 1.06 mW from a 1 V supply, and has a −119 dBc/Hz phase noise at 10 MHz offset, achieving a figure of merit of −188.4 dB. The 60 GHz VCO consumes 1.35 mW and has a −111.9 dBc/Hz phase noise at 10 MHz offset, achieving a figure of merit of −186.2 dB. Their active areas are 0.03 mm2 and 0.096 mm2 respectively.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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