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High resolution 100...
High resolution 100kV electron beam lithography in SU-8
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Bilenberg, B. (författare)
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- Jacobsen, S. (författare)
- Technical University of Denmark
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Schmidt, M.s. (författare)
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- Skjolding, L.h.d. (författare)
- Technical University of Denmark
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Shi, P. (författare)
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Bøggild, P. (författare)
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- Tegenfeldt, J.O. (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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Kristensen, A. (författare)
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(creator_code:org_t)
- Elsevier BV, 2006
- 2006
- Engelska.
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317. ; 83:4-9, s. 1609-1612
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- High resolution 100 kV electron beam lithography in thin layers of the negative resist SU-8 is demonstrated. Sub-30 nm lines with a pitch down to 300 nm are written in 100 nm thick SU-8. Two reactive ion etch processes are developed in order to transfer the SU-8 structures into a silicon substrate, a Soft O-2-Plasma process to remove SU-8 residues on the silicon surface after development and a highly anisotropic SF6/O-2/CHF3 based process to transfer the pattern into a silicon substrate, with selectivity between silicon and SU-8 of approximately 2. 30 nm lines patterned in SU-8 are successfully transferred into a silicon substrate, which is used as a stamp in a nanoimprint lithography process to fabricate a nanochannel device for DNA stretching experiments. (c) 2006 Elsevier B.V. All rights reserved.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- SU-8
- 100 kV electron beam lithography
- reactive ion etch
- DNA stretching
- nanochannels
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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