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A 4.3-mW mm-Wave Di...
A 4.3-mW mm-Wave Divide-by-Two Circuit with 30% Locking Range in 28-nm FD-SOI CMOS
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- Forsberg, Therese (författare)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Integrerade elektroniksystem,Forskargrupper vid Lunds universitet,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Integrated Electronic Systems,Lund University Research Groups
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- Wernehag, Johan (författare)
- Lund University,Lunds universitet,Integrerade elektroniksystem,Forskargrupper vid Lunds universitet,Integrated Electronic Systems,Lund University Research Groups
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- Sjöland, Henrik (författare)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Integrerade elektroniksystem,Forskargrupper vid Lunds universitet,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Integrated Electronic Systems,Lund University Research Groups
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- Törmänen, Markus (författare)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Integrerade elektroniksystem,Forskargrupper vid Lunds universitet,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Integrated Electronic Systems,Lund University Research Groups
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(creator_code:org_t)
- 2018
- 2018
- Engelska 4 s.
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Ingår i: 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC). - 9781538676578 - 9781538676561
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- A mm-wave divide-by-two circuit with high injection efficiency, implemented in a 28-nm fully-depleted silicon-on-insulator (FD-SOI) CMOS process is demonstrated stand-alone, as well as using an on-chip voltage controlled oscillator (VCO) as the input signal source. Measurements show that the divider has a 30.1 % tuning range centered at an output frequency of 24 GHz, at an input signal power of -1.5 dBm, and a power consumption of 4.3 mW from a 0.9 V supply. The VCO and divider combination has a tuning range of 10.2 %, centered at an output frequency of 30.2 GHz, at a total power consumption of 6.3 mW, and an output phase noise of -111 dBc/Hz at 10 MHz offset. The active area of the divider is 0.032 mm 2 and of the divider and VCO combination 0.043 mm 2 .
- A mm-wave divide-by-two circuit with high injection efficiency, implemented in a 28-nm fully-depleted silicon-on-insulator (FD-SOI) CMOS process is demonstrated stand-alone, as well as using an on-chip voltage controlled oscillator (VCO) as the input signal source. Measurements show that the divider has a 30.1 % tuning range centered at an output frequency of 24 GHz, at an input signal power of -1.5 dBm, and a power consumption of 4.3 mW from a 0.9 V supply. The VCO and divider combination has a tuning range of 10.2 %, centered at an output frequency of 30.2 GHz, at a total power consumption of 6.3 mW, and an output phase noise of -111 dBc/Hz at 10 MHz offset. The active area of the divider is 0.032 mm 2 and of the divider and VCO combination 0.043 mm 2.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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