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A 1.6-2.6GHz 29dBm ...
A 1.6-2.6GHz 29dBm Injection-Locked Power Amplifier with 64% peak PAE in 65nm CMOS
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- Lindstrand, Jonas (författare)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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- Bryant, Carl (författare)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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- Törmänen, Markus (författare)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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visa fler...
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- Sjöland, Henrik (författare)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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visa färre...
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(creator_code:org_t)
- 2011
- 2011
- Engelska 4 s.
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Ingår i: Proc. IEEE European Solid State Circuits Conference. - 1930-8833. ; , s. 299-302
- Relaterad länk:
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https://lup.lub.lu.s...
Abstract
Ämnesord
Stäng
- This paper presents a wideband CMOS power amplifier intended for cellular handset applications. The circuit exploits injection locking to achieve a power gain of 20.5dB from a single stage amplifier. The maximum output power of 29dBm, with a peak drain- and power-added-efficiency (PAE) of 66% and 64%, respectively, occurs at a center frequency of 2GHz with a 3V supply. A cross-coupled cascode topology enables a wideband PAE exceeding 50% from 1.6 to 2.6GHz. For output power levels below 4dBm the circuit operates as a linear class AB amplifier with a power consumption of 17mW from a 0.48V supply. The power gain of 20.5dB is kept constant for all output powers; with an AM-AM- and AM-PM-conversion of 0.2dB and 17deg, respectively, over the entire WCDMA dynamic range of 80dB. The circuit is implemented in a standard 65nm CMOS process with a total chip area of 0.52x0.48mm2 including pads.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Power efficiency
- Poweramplifier
- Injection lock
- CMOS
- Hybrid EER
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- kon (ämneskategori)
- ref (ämneskategori)
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