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Investigation of Mu...
Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al2O3 Gate Dielectric Layer
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- Jian, Jhang-Jie (författare)
- National Cheng Kung University
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- Lee, Hsin-Ying (författare)
- National Cheng Kung University
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- Chang, Edward Yi (författare)
- National Yang Ming Chiao Tung University
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- Rorsman, Niklas, 1964 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Lee, Ching-Ting (författare)
- Yuan Ze University,National Cheng Kung University
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(creator_code:org_t)
- 2021-05-28
- 2021
- Engelska.
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Ingår i: ECS Journal of Solid State Science and Technology. - : The Electrochemical Society. - 2162-8777 .- 2162-8769. ; 10:5
- Relaterad länk:
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https://doi.org/10.1...
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https://research.cha...
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Abstract
Ämnesord
Stäng
- In this work, an atomic layer deposition system was used to deposit Al2O3 high-k dielectric film as the gate insulator of GaN-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs). By using the Al2O3 gate dielectric layer, compared to planar channel structure, the direct current, high frequency, and flicker noise performances were improved in the GaN-based MOSHEMTs with fin-nanochannel array. For the GaN-based 80-nm-wide fin-nanochannel array MOSHEMTs, they exhibited superior performances of maximum extrinsic transconductance of 239 mS mm(-1), threshold voltage of -0.4 V, unit gain cutoff frequency of 7.3 GHz, maximum oscillation frequency of 14.1 GHz, normalized noise power of 2.5 x 10(-14) Hz(-1), and Hooge's coefficient of 1.4 x 10(-6). The enhanced performances were attributed to the features of fin-nanochannel array of better gate control capability, enhanced pinch-off effect, and better heat dissipation driven by lateral heat flow within the space between fin-channels.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Maskinteknik -- Energiteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Mechanical Engineering -- Energy Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Signalbehandling (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Signal Processing (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- electron-beam lithography system
- GaN-based MOSHEMTs
- fin-nanochannel array
- photoelectrochemical etching method
- Al2O3 high-k gate dielectric layer
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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