Sökning: onr:"swepub:oai:research.chalmers.se:25899855-4df7-4405-9135-eeafa67cd8e2" >
Composition Depende...
Composition Dependence of Structural and Electronic Properties of Quaternary InGaNBi
-
- Liang, D. (författare)
- Beijing University of Posts and Telecommunications (BUPT)
-
- Zhu, Pengfei (författare)
- Beijing University of Posts and Telecommunications (BUPT)
-
- Han, L. H. (författare)
- Beijing University of Posts and Telecommunications (BUPT)
-
visa fler...
-
- Zhang, Tao (författare)
- Sichuan University
-
- Li, Yang (författare)
- Beijing University of Posts and Telecommunications (BUPT)
-
- Li, Shanjun (författare)
- Sichuan University
-
- Wang, Shu Min, 1963 (författare)
- Chinese Academy of Sciences,Chalmers tekniska högskola,Chalmers University of Technology
-
- Lu, P. F. (författare)
- Beijing University of Posts and Telecommunications (BUPT)
-
visa färre...
-
(creator_code:org_t)
- 2019-05-28
- 2019
- Engelska.
-
Ingår i: Nanoscale Research Letters. - : Springer Science and Business Media LLC. - 1556-276X .- 1931-7573. ; 14
- Relaterad länk:
-
https://research.cha... (primary) (free)
-
visa fler...
-
https://nanoscaleres...
-
https://doi.org/10.1...
-
https://research.cha...
-
visa färre...
Abstract
Ämnesord
Stäng
- To realize feasible band structure engineering and hence enhanced luminescence efficiency, InGaNBi is an attractive alloy which may be exploited in photonic devices of visible light and mid-infrared. In present study, the structural, electronic properties such as bandgap, spin-orbit splitting energy, and substrate strain of InGaNBi versus In and Bi compositions are studied by using first-principles calculations. The lattice parameters increase almost linearly with increasing In and Bi compositions. By bismuth doping, the quaternary InGaNBi bandgap could cover a wide energy range from 3.273 to 0.651 eV for Bi up to 9.375% and In up to 50%, corresponding to the wavelength range from 0.38-1.9 µm. The calculated spin-orbit splitting energy are about 0.220 eV for 3.125%, 0.360 eV for 6.25%, and 0.600 eV for 9.375% Bi, respectively. We have also shown the strain of InGaNBi on GaN; it indicates that through adjusting In and Bi compositions, InGaNBi can be designed on GaN with an acceptable strain.
Ämnesord
- NATURVETENSKAP -- Fysik -- Annan fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Other Physics Topics (hsv//eng)
- NATURVETENSKAP -- Kemi -- Teoretisk kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Theoretical Chemistry (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- Electronic
- InGaNBi
- Quaternary
- Strain
- First-principles
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
Hitta via bibliotek
Till lärosätets databas