Sökning: onr:"swepub:oai:research.chalmers.se:614bbdf3-ed16-4c69-b341-125dd075a8ef" > Enhanced high-frequ...
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000 | 04324naa a2200481 4500 | |
001 | oai:research.chalmers.se:614bbdf3-ed16-4c69-b341-125dd075a8ef | |
003 | SwePub | |
008 | 201218s2021 | |||||||||||000 ||eng| | |
024 | 7 | a https://research.chalmers.se/publication/5221502 URI |
024 | 7 | a https://doi.org/10.1109/TED.2020.30461722 DOI |
024 | 7 | a https://research.chalmers.se/publication/5210602 URI |
040 | a (SwePub)cth | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a art2 swepub-publicationtype |
072 | 7 | a ref2 swepub-contenttype |
100 | 1 | a Asad, Muhammad,d 1986u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)asadmu |
245 | 1 0 | a Enhanced high-frequency performance of top-gated graphene FETs due to substrate-induced improvements in charge carrier saturation velocity |
264 | 1 | c 2021 |
338 | a electronic2 rdacarrier | |
520 | a High-frequency performance of top-gated graphene field-effect transistors (GFETs) depends to a large extent on the saturation velocity of the charge car-riers, a velocity limited by inelastic scattering by surface optical phonons from the dielectrics surrounding the chan-nel. In this work, we show that by simply changing the graphene channel surrounding dielectric with a material having higher optical phonon energy, one could improve the transit frequency and maximum frequency of oscillation of GFETs. We fabricated GFETs on conventional SiO2/Si substrates by adding a thin Al2O3 interfacial buffer layer on top of SiO2/Si substrates, a material with about 30% higher optical phonon energy than that of SiO2, and compared performance with that of GFETs fabricated without adding the interfacial layer. From S-parameter measurements, a transit frequency and a maximum frequency of oscillation of 43 GHz and 46 GHz, respectively, were obtained for GFETs on Al2O3 with 0.5 µm gate length. These values are approximately 30% higher than those for state-of-the-art GFETs of the same gate length on SiO2. For relating the improvement of GFET high-frequency performance to improvements in the charge carrier saturation velocity, we used standard methods to extract the charge carrier veloc-ity from the channel transit time. A comparison between two sets of GFETs with and without the interfacial Al2O3 layer showed that the charge carrier saturation velocity had increased to 2·10^7 cm/s from 1.5·10^7 cm/s. | |
650 | 7 | a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronik0 (SwePub)2022 hsv//swe |
650 | 7 | a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)2022 hsv//eng |
650 | 7 | a TEKNIK OCH TEKNOLOGIERx Nanoteknik0 (SwePub)2102 hsv//swe |
650 | 7 | a ENGINEERING AND TECHNOLOGYx Nano-technology0 (SwePub)2102 hsv//eng |
650 | 7 | a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronikx Annan elektroteknik och elektronik0 (SwePub)202992 hsv//swe |
650 | 7 | a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineeringx Other Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)202992 hsv//eng |
653 | a graphene | |
653 | a maximum frequency of oscillation | |
653 | a Field-effect transistors (FETs) | |
653 | a transit frequency | |
653 | a optical phonons | |
653 | a saturation velocity | |
700 | 1 | a Jeppson, Kjell,d 1947u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)jeppson |
700 | 1 | a Vorobiev, Andrei,d 1963u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)vorobiev |
700 | 1 | a Bonmann, Marlene,d 1988u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)marbonm |
700 | 1 | a Stake, Jan,d 1971u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)stake |
710 | 2 | a Chalmers tekniska högskola4 org |
773 | 0 | t IEEE Transactions on Electron Devicesg 68:2, s. 899-902q 68:2<899-902x 1557-9646x 0018-9383 |
856 | 4 | u https://research.chalmers.se/publication/522150/file/522150_Fulltext.pdfx primaryx freey FULLTEXT |
856 | 4 8 | u https://research.chalmers.se/publication/522150 |
856 | 4 8 | u https://doi.org/10.1109/TED.2020.3046172 |
856 | 4 8 | u https://research.chalmers.se/publication/521060 |
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