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Microwave Performan...
Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors
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- Chen, Ding Yuan (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Malmros, Anna, 1977 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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Thorsell, Mattias, 1982 (författare)
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Hjelmgren, Hans, 1960 (författare)
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Kordina, O. (författare)
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Chen, J. T. (författare)
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- Rorsman, Niklas, 1964 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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visa färre...
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(creator_code:org_t)
- 2020
- 2020
- Engelska.
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 41:6, s. 828-831
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https://research.cha...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- High performance microwave GaN-on-SiC HEMTs are demonstrated on a heterostructure without a conventional thick doped buffer. The HEMT is fabricated on a high-quality 0.25~\boldsymbol {\mu }\text{m} unintentional doped GaN layer grown directly on a transmorphic epitaxially grown AlN nucleation layer. This approach allows the AlN-nucleation layer to act as a back-barrier, limiting short channel effects and removing buffer leakage. The devices with the 'buffer-free' heterostructure show competitive DC and RF characteristics, as benchmarked against the devices made on a commercial Fe-doped epi-wafer. Peak transconductances of 500 mS/mm and a maximum saturated drain current of 1 A/mm are obtained. An extrinsic \text{f}-{\sf T} of 70 GHz and \text{f}-{\sf max} of 130 GHz are achieved for transistors with a gate length of 100 nm. Pulsed-IV measurements reveal a lower current slump and a smaller knee walkout. The dynamic IV performance translates to an output power of 4.1 W/mm, as measured with active load-pull at 3 GHz. These devices suggest that the 'buffer-free' concept may offer an alternative route for high frequency GaN HEMTs with less electron trapping effects.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- GaN
- HEMTs
- microwave
- buffer-free 23 heterostructure
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Chen, Ding Yuan
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Malmros, Anna, 1 ...
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Thorsell, Mattia ...
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Hjelmgren, Hans, ...
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Kordina, O.
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Chen, J. T.
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visa fler...
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Rorsman, Niklas, ...
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visa färre...
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