Semiconductor measurement technology Results of the Monte Carlo calculation of one- and two-dimensional distributions of particles and damage: ion implanted dopants in silicon

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Fältnamn	Indikatorer	Metadata
000		01115cam a22002293 4500
001		99799
003		SE-LIBR
005		20180604102444.0
008		011211s1987 xxu\|\|\|\|\|\|\|\|\|\|\|000 0\|eng\|c
035		9 9907516325
040		a T
041		a eng
082	4	a 537.622 028 7
084		a Uccd2 kssb/8 (machine generated)
245	1 0	a Semiconductor measurement technologyp Results of the Monte Carlo calculation of one- and two-dimensional distributions of particles and damage: ion implanted dopants in silicon /c John Albers.
264	1	a Washington,c 1987
300		a 667 s.
599		a Delarna fileras på huvudseriens subnummer. - Formatering: 245 g) ... w)=seriens subnummer
700	1	a Albers, John4 oth
740	0	a Results of the Monte Carlo calculation of one- and two-dimensional distributions of particles and damage: ion implanted dopants in silicon
772	0 0	t Semiconductor measurement technologyd Washington, 1974-k National Bureau of Standards special publication ; 400:1-w 9900958608
887		a {"@id":"9sl5d9hm235xqsp","modified":"2018-06-04T10:24:44.682+02:00","checksum":"63859912848"}2 librisxl

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