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Interband transitio...
Interband transitions in InAs quantum dots in InP studied by photoconductivity and photoluminescence techniques
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- Landin, L. (author)
- Högskolan i Halmstad,Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE),Division of Solid State Physics, Lund University, Lund, Sweden
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- Pettersson, H. (author)
- Högskolan i Halmstad,Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE)
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- Kleverman, Mats (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Division of Solid State Physics, Lund University, Lund, Sweden
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- Borgström, Magnus (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Division of Solid State Physics, Lund University, Lund, Sweden
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- Zhang, X. (author)
- Division of Solid State Physics, Lund University, Lund, Sweden
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- Seifert, Werner (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Division of Solid State Physics, Lund University, Lund, Sweden
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- Samuelson, Lars (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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(creator_code:org_t)
- Melville : American Institute of Physics (AIP), 2004
- 2004
- English.
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In: Journal of Applied Physics. - Melville : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 95:12, s. 8007-8010
- Related links:
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http://dx.doi.org/10...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- We report on a detailed investigation of the interband optics of self-assembled InAs dots embedded in a matrix of InP. In photoconductivity (PC) measurements, we observe optical processes related to the dots and a wetting layer, band-to-band excitation of the InP barrier, as well as to an interesting As-related impurity. In particular, the PC measurements reveal the electronic structure of the dots and strongly suggest that an Auger effect is involved in forming the PC signal. Comparing the PC and photoluminescence (PL) signals, we observe that the fundamental transition is not observed in PC, which we interpret in terms of Pauli blocking due to electrons populating the ground state of the dots. In general, it is demonstrated that the PC technique is in many respects complementary to PL and gives additional insight into the electronic structure of quantum dots.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Electronics
- Matrices
- Optics
- Photoconductivity
- Photoluminescence
- Semiconductors
Publication and Content Type
- ref (subject category)
- art (subject category)
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