Reflectance difference spectroscopy of GaAs asymmetric surface quantum wells above the fundamental gap

Lastras-Martínez, L. F.Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany (författare)

We report Reflectance Difference (RD) measurement on (001) GaAs surface quantum wells (QW) under Ultra High Vacuum (UHV) conditions from 1.7 to 5.0eV. The QW is embedded between an arsenic-rich reconstructed GaAs surface and an AlAs barrier. The samples, grown by MBE with a protective arsenic cap layer, were heated to 320 and 430Â°C to desorb the As layer and form c(4 x 4) and (2 x 4) surface reconstructions, respectively. By modifying the surface reconstructure, we are able to separate the contributions to the optical anisotropy from the surface region (mainly associated with the As dimers) from those originating below the surface.

NATURVETENSKAP Fysik hsv//swe
NATURAL SCIENCES Physical Sciences hsv//eng
TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik hsv//swe
ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
Energy gap; Molecular beam epitaxy; Reflection; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconductor growth; Spectroscopy; Surface treatment
Aluminum arsenide; Optical anisotropy; Reflectance difference spectroscopy
Semiconductor quantum wells

Santos, P. V.Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany (författare)
Rönnow, DanielMax-Planck-Institut für Festkörperforschung, Stuttgart, Germany(Swepub:hig)dalrow (författare)
Cardona, M.Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany (författare)
Specht, P.Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany (författare)
Eberl, K.Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany (författare)
Max-Planck-Institut für Festkörperforschung, Stuttgart, GermanyPaul-Drude-Institut für Festkörperelektronik, Berlin, Germany (creator_code:org_t)

Ingår i:Physica status solidi. A, Applied research170:2, s. 317-3210031-89651521-396X

Av författaren/redakt...: Lastras-Martíne ...; Santos, P. V.; Rönnow, Daniel; Cardona, M.; Specht, P.; Eberl, K.

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