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Sökning: id:"swepub:oai:DiVA.org:hv-12002" > Effect of hole-tran...

  • Islavath, NanajiCentre for Solar Energy Materials, International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Hyderabad 500005, India (författare)

Effect of hole-transporting materials on the photovoltaic performance and stability of all-ambient-processed perovskite solar cells

  • Artikel/kapitelEngelska2017

Förlag, utgivningsår, omfång ...

  • Elsevier BV,2017
  • printrdacarrier

Nummerbeteckningar

  • LIBRIS-ID:oai:DiVA.org:hv-12002
  • https://urn.kb.se/resolve?urn=urn:nbn:se:hv:diva-12002URI
  • https://doi.org/10.1016/j.jechem.2016.12.011DOI

Kompletterande språkuppgifter

  • Språk:engelska
  • Sammanfattning på:engelska

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  • Ämneskategori:ref swepub-contenttype
  • Ämneskategori:art swepub-publicationtype

Anmärkningar

  • High-efficiency perovskite solar cells (PSCs) reported hitherto have been mostly prepared in a moisture and oxygen-free glove-box atmosphere, which hampers upscaling and real-time performance assessment of this exciting photovoltaic technology. In this work, we have systematically studied the feasibility of all-ambient-processing of PSCs and evaluated their photovoltaic performance. It has been shown that phase-pure crystalline tetragonal MAPbI3 perovskite films are instantly formed in ambient air at room temperature by a two-step spin coating process, undermining the need for dry atmosphere and post-annealing. All-ambient-processed PSCs with a configuration of FTO/TiO2/MAPbI3/Spiro-OMeTAD/Au achieve open-circuit voltage (990 mV) and short-circuit current density (20.31 mA/cm2) comparable to those of best reported glove-box processed devices. Nevertheless, device power conversion efficiency is still constrained at 5% by the unusually low fill-factor of 0.25. Dark current–voltage characteristics reveal poor conductivity of hole-transporting layer caused by lack of oxidized spiro-OMeTAD species, resulting in high series-resistance and decreased fill-factor. The study also establishes that the above limitations can be readily overcome by employing an inorganic p-type semiconductor, copper thiocyanate, as ambient-processable hole-transporting layer to yield a fill-factor of 0.54 and a power conversion efficiency of 7.19%. The present findings can have important implications in industrially viable fabrication of large-area PSCs.The poor conductivity of ambient-processed spiro-OMeTAD HTM layer caused by lack of oxidation is identified as a major performance limiting factor and successfully overcome by replacing with stable inorganic CuSCN.

Ämnesord och genrebeteckningar

Biuppslag (personer, institutioner, konferenser, titlar ...)

  • Saroja, S.Centre for Solar Energy Materials, International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Hyderabad 500005, India (författare)
  • Reddy, K SrinivasCentre for Solar Energy Materials, International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Hyderabad 500005, India (författare)
  • Harikesh, P.C.Centre for Solar Energy Materials, International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Hyderabad 500005, India (författare)
  • Veerappan, G.Centre for Solar Energy Materials, International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Hyderabad 500005, India (författare)
  • Joshi, Shrikant V.,1960-Högskolan Väst,Avdelningen för avverkande och additativa tillverkningsprocesser (AAT),Centre for Solar Energy Materials, International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Hyderabad 500005, India,PTW(Swepub:hv)shrjos (författare)
  • Ramasamy, EaswaramoorthiCentre for Solar Energy Materials, International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Hyderabad 500005, India (författare)
  • Centre for Solar Energy Materials, International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Hyderabad 500005, IndiaAvdelningen för avverkande och additativa tillverkningsprocesser (AAT) (creator_code:org_t)

Sammanhörande titlar

  • Ingår i:Journal of Energy Chemistry: Elsevier BV26:3, s. 584-5912095-49562096-885X

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