Low temperature activation of B implantation of Si subcell fabrication in III-V/Si tandem solar cells

• In this work, we investigated the Si pre-amorphization implantation (PAI) assisted low temperatureannealing process to activate boron implantation in n-Si in a hydride vapor phase epitaxy (HVPE) reactor, which canbe used for the Si subcell fabrication in the III-V/Si tandem solar cells enabled by the corrugated epitaxial lateralovergrowth (CELOG). A uniform boron activation in Si and a low emitter sheet resistance of 77 /sq was obtained atannealing temperatures of 600-700°C. High-resolution x-ray diffraction was used to study the recrystallization ofamorphous silicon and the incorporation of boron dopants in Si. Hall measurements revealed p-type carrierconcentrations in the order of 1020 cm-3. The n-Si wafers with B implantation activated at 700°C by HVPE wereprocessed to solar cells and characterized by the standard light-current-voltage measurement under AM1.5 spectrumand external quantum efficiency measurements. The developed B implantation and low temperature activationprocesses are applied to the InP/Si seed template preparation for CELOG, on which CELOG GaInP over a Si subcellwith a direct heterojunction was demonstrated.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Multijunction Solar Cell

III-V semiconductors

Annealing

Amorphous Silicon

Physics

Fysik

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