Absolute surface energies of wurtzite (10 1 over bar 1) surfaces and the instability of the cation-adsorbed surfaces of II-VI semiconductors

• We have investigated the wurtzite (10 1 over bar 1) planes of five semiconductors, AlN, GaN, GaAs, ZnO, and ZnS. The absolute surface energies are obtained by using a series of wedge nanowire structures. A cation-adsorbed surface reconstruction, (1 x 1)X (X is the electropositive element of the semiconductor) adlayer, is found to have dramatically low energy under the cation-rich condition for AlN and GaN. A p electron draining mechanism is proposed to explain these results. We also developed a framework to analyze the stabilization mechanism of the unneutral surfaces. It suggests that the cation-adsorbed surfaces of II-VI semiconductors should be more unstable than the anion-adsorbed surfaces.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

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WAVE

FORMALDEHYDE

Physics

Fysik

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