Metal work-function and doping-concentration dependent barrier height of Ni-contacts to 4H-SiC with metal-embedded nano-particles

• We investigated the effect of the metal work-function and doping concentration on the barrier height of Ni-contacts with embedded nano-particles (NPs) on 4H-SiC surfaces. Both n-type epitaxial layers with N-D=1x10(16) cm(-3), and layers doped by phosphorus implantation to a doping concentration of similar to 1x10(19) cm(-3) are used. The barrier height is reduced with increasing doping concentration and the silver (Ag) nano-particles (R similar to 18.5 nm) further enhance the local electric field of the electrical contacts to 4H-SiC in comparison to gold (Au) nano-particles (R similar to 20.2 nm). In the case of ion-implanted samples, the barrier height of the fabricated SiC diode structures with embedded Ag-NPs was significantly reduced by similar to 0.09 eV and similar to 0.25 eV compared to the samples with Au-NPs and the sample without NPs, respectively.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Barrier height

Metal contact

Nano-particles

Tung's model

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)