Irradiation induced nanotrack and property modification in Zn 3P 2

• Zn 3P 2 epilayers were grown on InP (100) substrates by liquid phase epitaxy (LPE) using In solvent. Zinc composition in the epilayers was varied by changing the zinc mole fraction in the growth melt and was confirmed by energy dispersive X-ray analysis (EDAX). Stoichiometric Zn 3P 2 epilayers were subjected to 100 MeV Ni ion irradiation with various ion fluences of 1 × 10 10 to 1 × 10 13 ions/cm 2 at 77 K. From the high resolution X-ray diffraction (HRXRD) of 100 MeV Ni ion irradiated epilayers, the decrease in the peak intensities and increase in the FWHM values were observed. AFM analysis revealed the formation of nanotracks in the irradiated Zn 3P 2 epilayers. Hall measurements showed the decrease in carrier mobility with the increase of ion fluence. The absorption band edge of Zn 3P 2 gradually decreased from 1.49 eV to 1.42 eV upon increasing the ion fluence.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Nyckelord

Atomic force microscopy

Ion irradiation

Liquid phase epitaxy

Nanotrack

Semiconducting materials

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