Very high aspect ratio through-silicon vias (TSVs) fabricated using automated magnetic assembly of nickel wires

QC 20120827
Through-silicon via (TSV) technology enables 3D-integrated devices with higher performance and lower cost as compared to 2D-integrated systems. This is mainly due to smaller dimensions of the package and shorter internal signal lengths with lower capacitive, resistive and inductive parasitics. This paper presents a novel low-cost fabrication technique for metal-filled TSVs with very high aspect ratios (>20). Nickel wires are placed in via holes of a silicon wafer by an automated magnetic assembly process and are used as a conductive path of the TSV. This metal filling technique enables the reliable fabrication of through-wafer vias with very high aspect ratios and potentially eliminates characteristic cost drivers in the TSV production such as advanced metallization processes, wafer thinning and general issues associated with thin-wafer handling.

In:Journal of Micromechanics and Microengineering: Institute of Physics (IOP)22:10, s. 105001-0960-13171361-6439

By the author/editor: Fischer, Andreas ...; Bleiker, Simon J ...; Haraldsson, Tomm ...; Roxhed, Niclas; Stemme, Göran; Niklaus, Frank

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.