Characterization of Ni(Si,Ge) films on epitaxial SiGe(100) formed by microwave annealing

Hu, ChengState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, Kina (författare)

QC 20121106
Microwave annealing (MWA) is investigated as an alternative technique to rapid thermal processing with halogen lamp heating (RTP) for low-temperature silicide formation on epitaxially grown Si0.81Ge0.19 layers. Phase formation, resistivity mapping, morphology analysis, and composition evaluation indicate that the formation of low-resistivity NiSi1-xGex by means of MWA occurs at temperatures about 100 degrees C lower than by RTP. Under similar annealing conditions, more severe strain relaxation and defect generation are therefore found in the remaining Si0.81Ge0.19 layers treated by MWA. Although silicidation by microwave heating is in essence also due to thermal effects, details in heating mechanisms differ from RTP.

Xu, PengState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, Kina (författare)
Fu, ChaochaoState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, Kina (författare)
Zhu, ZhiweiUppsala universitet,Fasta tillståndets elektronik(Swepub:uu)zhizh813 (författare)
Gao, XindongUppsala universitet,Fasta tillståndets elektronik(Swepub:uu)xinga567 (författare)
Jamshidi, AsgharKTH,Skolan för informations- och kommunikationsteknik (ICT),Shool of Information and Communication Technology, Royal Institute of Technology, Kista(Swepub:kth)u19tkper (författare)
Noroozi, MohammadKTH,Skolan för informations- och kommunikationsteknik (ICT),School of Information and Communication, Royal Institute of Technology, Kista(Swepub:kth)u187vgbh (författare)
Radamson, HenryKTH,Integrerade komponenter och kretsar,School of Information and Communication technology, Royal Institute of Technology, Kista(Swepub:kth)u1g2cqgr (författare)
Wu, DongpingState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, Kina (författare)
Zhang, Shi-LiUppsala universitet,Fasta tillståndets elektronik(Swepub:uu)shizh725 (författare)
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, KinaFasta tillståndets elektronik (creator_code:org_t)

Ingår i:Applied Physics Letters: AIP Publishing101:9, s. 092101-0003-69511077-3118

Av författaren/redakt...: Hu, Cheng; Xu, Peng; Fu, Chaochao; Zhu, Zhiwei; Gao, Xindong; Jamshidi, Asghar; visa fler...; Noroozi, Mohamma ...; Radamson, Henry; Wu, Dongping; Zhang, Shi-Li; visa färre...

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