Effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs films studied by planar Hall effect

• We have investigated the effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs film using the planar Hall effect (PHE). Different thicknesses were obtained on a single GaMnAs specimen by using different etching times on selected areas, and the PHE was then measured using the Hall bar configurations patterned on the area. Cubic and uniaxial anisotropy fields were obtained for the films by fitting the angular dependence of the PHE data to the Stoner-Wohlfarth model. The results exhibited a very systematic dependence on the etched thickness, demonstrating that the chemical etching process significantly affects the magnetic anisotropy of ferromagnetic GaMnAs films.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

A. Ferromagentism

A. Semiconductor

D. Anisotropy

E. Planar Hall effect

Anisotropy

Crystallography

Cubic boron nitride

Electric currents

Etching

Ferromagnetic materials

Ferromagnetism

Gallium alloys

Galvanomagnetic effects

Gyrators

Hall effect

Magnetic field effects

Magnetic materials

Magnetic properties

Magnetism

Mathematical models

Molecular beam epitaxy

Photoacoustic effect

Angular dependences

chemical etching

Chemical-etching process

Elsevier (CO)

Magnetic (CE)

Planar Hall effects

Stoner Wohlfarth model (SW)

Systematic (CO)

Uniaxial anisotropy fields

Magnetic anisotropy

Publication and Content Type

ref (subject category)

art (subject category)