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1.22 µm GaInNAs sat...
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Puustinen, J.
(författare)
1.22 µm GaInNAs saturable absorber mirrors with tailored recovery time
- Artikel/kapitelEngelska2010
Förlag, utgivningsår, omfång ...
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American Institute of Physics (AIP),2010
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printrdacarrier
Nummerbeteckningar
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LIBRIS-ID:oai:DiVA.org:kth-107878
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-107878URI
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https://doi.org/10.1063/1.3521361DOI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:ref swepub-contenttype
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Ämneskategori:kon swepub-publicationtype
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QC 20130528
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The effect of in-situ N-ion irradiation on the recombination dynamics of GaInNAs/GaAs semiconductor saturable absorber mirrors has been studied. The samples were fabricated by molecular beam epitaxy using a radio frequency plasma source for nitrogen incorporation in the absorber layers as well as for the irradiation. The recombination dynamics of irradiated samples were studied by pump-probe measurements. The recombination time of the absorbers could be reduced by increasing the irradiation time. The effect of the reduced recombination time on the pulse dynamics of a mode-locked laser setup was studied with a Bi-doped fibre laser. The pulse quality was found to improve with increased irradiation time and reduced recombination time, demonstrating the potential of the in-situ irradiation method for device applications.
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Biuppslag (personer, institutioner, konferenser, titlar ...)
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Guina, Mircea
(författare)
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Korpijärvi, V. M.
(författare)
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Marcinkevicius, SauliusKTH,Optik(Swepub:kth)u16tz6ld
(författare)
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Tukiainen, A.
(författare)
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Kivistö, A.
(författare)
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Pessa, Marcus
(författare)
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KTHOptik
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:Emerging trends and novel materials in photonics: American Institute of Physics (AIP), s. 200-2039780735408432
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