WFRF:(Zhang Kai)
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- Fu, KaiKTH,Teoretisk kemi,Theoretical Chemistry (author)
Kinetic Monte Carlo study of metal organic chemical vapor deposition growth dynamics of GaN thin film at microscopic level
- Article/chapterEnglish2008
Publisher, publication year, extent ...
- AIP Publishing,2008
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:kth-11448
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-11448URI
- https://doi.org/10.1063/1.2927389DOI
Supplementary language notes
- Language:English
- Summary in:English
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- SwePubSwePub
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Notes
- QC 20100713
- Group III nitrides, especially gallium nitride (GaN), have many applications. The materials are usually grown by metal organic chemical vapor deposition (MOCVD) technology. By combining the computational fluid dynamics and kinetic Monte Carlo method, we present a multiscale modeling of fluid dynamics, thermodynamics, and molecular dynamics to study the chemical and physical growth process of GaN in a standard MOCVD reactor, which shows a general agreement with experimental results. The theoretical model thus provides us with a fundamental guideline for optimizing GaN MOCVD growth at the microscopic level.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Industriell bioteknik hsv//swe
- ENGINEERING AND TECHNOLOGY Industrial Biotechnology hsv//eng
- Bioengineering
- Bioteknik
Added entries (persons, corporate bodies, meetings, titles ...)
- Fu, YingKTH,Teoretisk kemi,Theoretical Chemistry(Swepub:kth)u1wnf4xe (author)
- Zhang, R. (author)
- KTHTeoretisk kemi (creator_code:org_t)
Related titles
- In:Journal of Applied Physics: AIP Publishing103:10, s. 103524-0021-89791089-7550
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