id:"swepub:oai:DiVA.org:kth-116177"
Search: id:"swepub:oai:DiVA.org:kth-116177" > Realization of In0....
- 1 of 1
- Previous record
- Next record
- To hitlist
- Akabori, M. (author)
Realization of In0.75Ga0.25As two-dimensional electron gas bilayer system for spintronics devices based on Rashba spin-orbit interaction
- Article/chapterEnglish2012
Publisher, publication year, extent ...
- AIP Publishing,2012
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:kth-116177
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-116177URI
- https://doi.org/10.1063/1.4766749DOI
Supplementary language notes
- Language:English
- Summary in:English
Part of subdatabase
- SwePubSwePub
Classification
Notes
- QC 20130118
- Narrow gap InGaAs two-dimensional electron gas (2DEG) bilayer samples are fabricated and confirmed to have good electronic qualities as well as strong Rashba-type spin-orbit interactions (SOIs). The 2DEG systems are realized by molecular beam epitaxy in the form of wide quantum wells (QWs) with thicknesses tQW∼40-120nm modulation doped in both the upper and lower InAlAs barriers. From the Hall measurements, the overall mobility values of μe ∼15 m2/V s are found for the total sheet electron density of ns ∼8 × 1011/cm2, although the ns is distributed asymmetrically as about 1:3 in the upper and lower 2DEGs, respectively. Careful low temperature magneto-resistance analysis gives large SO coupling constants of α ∼20 × 10 -12eV m as well as expected electron effective masses of m*/m0 ∼0.033-0.042 for each bilayer 2DEG spin sub-band. Moreover, the enhancement of α with decrease of tQW is found. The corresponding self-consistent calculation, which suggests the interaction between the bilayer 2DEGs, is carried out and the origin of α enhancement is discussed.
Subject headings and genre
- NATURVETENSKAP Fysik Annan fysik hsv//swe
- NATURAL SCIENCES Physical Sciences Other Physics Topics hsv//eng
- Bi-layer
- Bilayer systems
- Coupling constants
- Electron effective mass
- Electronic quality
- Hall measurements
- InAlAs
- Low temperatures
- Mobility value
- Modulation-doped
- Narrow gap
- Rashba spin orbit interaction
- Rashba-type spin-orbit
- Self-consistent calculation
- Sheet electron density
- Spintronics device
- Subbands
- Two-dimensional electron gas (2DEG)
- Hall mobility
- Molecular beam epitaxy
- Semiconductor quantum wells
- Two dimensional
- Electron gas
Added entries (persons, corporate bodies, meetings, titles ...)
- Hidaka, S. (author)
- Iwase, H. (author)
- Yamada, S. (author)
- Ekenberg, UlfKTH,Fotonik och optik(Swepub:kth)u1ajkh76 (author)
- KTHFotonik och optik (creator_code:org_t)
Related titles
- In:Journal of Applied Physics: AIP Publishing112:11, s. 113711-0021-89791089-7550
Internet link
Find in a library
- Journal of Applied Physics (Search for host publication in LIBRIS)
To the university's database
- 1 of 1
- Previous record
- Next record
- To hitlist
Find more in SwePub
- By the author/editor
- Akabori, M.
- Hidaka, S.
- Iwase, H.
- Yamada, S.
- Ekenberg, Ulf
- About the subject
-
- NATURAL SCIENCES
- NATURAL SCIENCES
- and Physical Science ...
- and Other Physics To ...
- Articles in the publication
- Journal of Appli ...
- By the university
- Royal Institute of Technology
Search outside SwePub
- Extend your search to:
- Google Book Search
- Google Scholar
Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.
- Copyright © LIBRIS - National Library Systems
- LIBRIS.kb.se
