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Photoemission and d...
Photoemission and density functional theory study of Ge(100) : Clean surface and Yb-induced (2x4) reconstruction
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Publisher, publication year, extent ...
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Elsevier,2013
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Numbers
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LIBRIS-ID:oai:DiVA.org:kth-125542
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-125542URI
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https://doi.org/10.1016/j.susc.2013.04.010DOI
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https://lup.lub.lu.se/record/3975420URI
Supplementary language notes
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Language:English
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Summary in:English
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Classification
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20130813
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Clean and metal-adsorbed (100) surfaces of group-IV semiconductors, such as Si and Ge, often exhibit electronically and structurally similar reconstructions. However, the fundamental bulk properties of group-IV materials can have an impact on particular features of such systems, which are related, e.g., to final-state relaxation in photoemission and thus determine their spectral line shape. Here we have studied Yb/Ge(100)(2 x 4) reconstruction as well as clean Ge(100) surface by high-resolution photoelectron spectroscopy and ab initio calculations. An atomic geometry of both surfaces is thoroughly investigated. A detailed analysis of Ge 3d core-level photoemission, atomic origins of surface-shifted components, and final-state screening effects is presented. In particular, it is demonstrated that the core-hole screening plays an essential role in Ge 3d measurements, and that its amount in the complete screening model correlates well with the core-level binding energy of respective Ge atoms in the initial state. The results are discussed in the proper context of related reconstructions on Si(100).
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Punkkinen, Marko Patrick JohnKTH,Tillämpad materialfysik(Swepub:kth)u1vmlqqu
(author)
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Laukkanen, P.
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Perälä, R. E.
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Lang, J. J. K.
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Dahl, J.
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Adell, JohanLund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory(Swepub:lu)maxl-jae
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Kokko, K.
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KTHTillämpad materialfysik
(creator_code:org_t)
Related titles
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In:Surface Science: Elsevier615, s. 88-960039-60281879-2758
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