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Area-optimized JTE ...
Area-optimized JTE simulations for 4.5 kV non ion-implanted sic BJT
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- Salemi, Arash (author)
- KTH,Integrerade komponenter och kretsar
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- Elahipanah, Hossein (author)
- KTH,Integrerade komponenter och kretsar
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- Buono, Benedetto (author)
- KTH,Integrerade komponenter och kretsar
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- Zetterling, Carl-Mikael (author)
- KTH,Integrerade komponenter och kretsar
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- Östling, Mikael (author)
- KTH,Integrerade komponenter och kretsar
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(creator_code:org_t)
- Trans Tech Publications Inc. 2013
- 2013
- English.
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In: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. - 9783037856246 ; 740-742, s. 974-977
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Subject headings
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- Non ion-implantation mesa etched 4H-SiC BJT with three-zone JTE of optimized lengths and doses (descending sequences) has been simulated. This design presents an efficient electric field distribution along the device. The device area has been optimized and considerably reduced. As a result of this comprehensive optimization, a high breakdown voltage (>6 kV) and high current gain (β=50) have been achieved; meanwhile the device area with a constant emitter and base contact area (300×300 μm2) will be reduced by about 30%.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Bipolar junction transistors (BJTS)
- Junction termination extension (JTE)
- Non-ion implantation
- Silicon carbide (SiC)
Publication and Content Type
- ref (subject category)
- art (subject category)
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