WFRF:(Elahipanah Hossein)
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- Salemi, ArashKTH,Integrerade komponenter och kretsar (author)
Area-optimized JTE simulations for 4.5 kV non ion-implanted sic BJT
- Article/chapterEnglish2013
Publisher, publication year, extent ...
- Trans Tech Publications Inc.2013
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:kth-127221
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-127221URI
- https://doi.org/10.4028/www.scientific.net/MSF.740-742.974DOI
Supplementary language notes
- Language:English
- Summary in:English
Part of subdatabase
- SwePubSwePub
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Notes
- QC 20130829. QC 20160304
- Non ion-implantation mesa etched 4H-SiC BJT with three-zone JTE of optimized lengths and doses (descending sequences) has been simulated. This design presents an efficient electric field distribution along the device. The device area has been optimized and considerably reduced. As a result of this comprehensive optimization, a high breakdown voltage (>6 kV) and high current gain (β=50) have been achieved; meanwhile the device area with a constant emitter and base contact area (300×300 μm2) will be reduced by about 30%.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik Annan elektroteknik och elektronik hsv//swe
- ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering Other Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
- Bipolar junction transistors (BJTS)
- Junction termination extension (JTE)
- Non-ion implantation
- Silicon carbide (SiC)
Added entries (persons, corporate bodies, meetings, titles ...)
- Elahipanah, HosseinKTH,Integrerade komponenter och kretsar(Swepub:kth)u1ve1t1u (author)
- Buono, BenedettoKTH,Integrerade komponenter och kretsar(Swepub:kth)u1uk9vii (author)
- Zetterling, Carl-MikaelKTH,Integrerade komponenter och kretsar(Swepub:kth)u15o61ns (author)
- Östling, MikaelKTH,Integrerade komponenter och kretsar(Swepub:kth)u1u0kle4 (author)
- KTHIntegrerade komponenter och kretsar (creator_code:org_t)
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- In:Materials Science Forum: Trans Tech Publications Inc.740-742, s. 974-9770255-54761662-97529783037856246
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