Carrier-transport, optical and structural properties of large area ELOG InP on Si using conventional optical lithography

• We present the carrier-transport, optical and structural properties of InP deposited on Si by Epitaxial Lateral Overgrowth (ELOG) in a Low Pressure-Hydride Vapor phase epitaxy (LP-HVPE). Hall measurements, micro photoluminescence (μ-PL) and X-ray diffraction (XRD) were used to study the above-mentioned respective properties at room temperature. It is the first time that electrical properties of ELOG InP on Si are studied by Hall measurements. Prior to ELOG, etching of patterned silicon dioxide (SiO2) mask leading to a high aspect ratio, i. e. mask thickness to opening width >2 was optimized to eliminate defect propagation even above the opening. Dense high aspect ratio structures were fabricated in SiO2 to obtain ELOG InP on Si, coalesced over large area, making it feasible to perform Hall measurements. We examine this method and study Hall mobility, strain and optical quality of large area ELOG InP on Si.

Ämnesord

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

ELOG

Hall

HVPE

InP

Defect propagation

Epitaxial lateral overgrowth

High aspect ratio structures

Micro photoluminescence

Aspect ratio

Epitaxial growth

Indium

Indium phosphide

Photolithography

Silicon

Structural properties

X ray diffraction

Electric properties

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