Dilute bismides for near and mid-infrared applications

Song, Yuxin,1981Chalmers tekniska högskola,Chalmers University of Technology (author)

QC 20131204
Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III-V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in near-infrared (NIR) and mid-infrared (MIR) optoelectronics. Recent progresses on molecular beam epitaxy (MBE) of novel III-Sb-Bi, i.e. GaSbBi and InSbBi thin films from our group are summarised in this paper. Quantum well structures based on GaSbBi and InGaAsBi aiming for the optical communication window were grown and characterized.

Gu, Y.Chinese Academy of Sciences (author)
Ye, Hong,1987Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)hongy (author)
Shi, P.Danmarks Tekniske Universitet,Technical University of Denmark (author)
Hallén, AndersKTH,Integrerade komponenter och kretsar,Kungliga Tekniska Högskolan (KTH),Royal Institute of Technology (KTH)(Swepub:kth)u11ywmz1 (author)
Chen, X.Chinese Academy of Sciences (author)
Shao, J.Chinese Academy of Sciences (author)
Wang, Shu Min,1963Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)shumin (author)
Chalmers tekniska högskolaChinese Academy of Sciences (creator_code:org_t)

In:2013 15th International Conference on Transparent Optical Networks (ICTON), s. 6602735-2162-73399781479906826

By the author/editor: Song, Yuxin, 198 ...; Gu, Y.; Ye, Hong, 1987; Shi, P.; Hallén, Anders; Chen, X.; show more...; Shao, J.; Wang, Shu Min, 1 ...; show less...

About the subject

By the university: Royal Institute of Technology; Chalmers University of Technology

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