Electron and hole capture cross-sections of Fe acceptors in GaN:Fe epitaxially grown on sapphire

• Carrier trapping of Fe (3+)/Fe2+ deep acceptors in epitaxially grown GaN:Fe on sapphire was studied by time-resolved photoluminescence. For the investigated Fe doping levels on the order of 10(18) cm(-3), the luminescence decay times are strongly dependent on the Fe concentration, indicating that Fe centers act as predominant nonradiative recombination channels. Linear dependence of the decay time on the iron concentration allows estimation of the electron capture cross-section for the Fe3+ ions, which is equal to 1.9 x 10(-15) cm(2). The upper bound for the cross-section of the hole capture of Fe2+ was evaluated as 10 x 10(-15) cm

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

GaN

Fe

semi-insulating

high electron mobility transistor (HEMT)

deep acceptor

electron capture cross section

metal-organic vapor phase epitaxy (MOVPE)

OPTICAL-PROPERTIES

LAYERS

LEVEL

IRON

INP

TECHNOLOGY

TEKNIKVETENSKAP

Publikations- och innehållstyp

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