LOW-TEMPERATURE CMOS-COMPATIBLE 3D-INTEGRATION OF MONOCRYSTALLINE-SILICON BASED PZT RF MEMS SWITCH ACTUATORS ON RF SUBSTRATES

• This paper presents a low temperature (200 degrees C) CMOS-compatible fabrication process for integrating high-temperature deposited lead zirconate titanate (PZT) on this film monocrystalline-silicon piezoelectric actuators, onto an RF substrate, and successful demonstration of this process for fabrication of metal-contact RF-MEMS switches. The patterned PZT/silicon multi-layer stack is transfer-bonded from a silicon-on-insulator (SOI) donor wafter to AF-45 glass RF substrate using adhesive wafer transfer bonding. Furthermore, several strategies have been investigate to drastically reduce the post bonding misalignment created by the shear forces between the bonding chucks during wafer bonding.

Ämnesord

NATURVETENSKAP  -- Data- och informationsvetenskap -- Systemvetenskap, informationssystem och informatik (hsv//swe)

NATURAL SCIENCES  -- Computer and Information Sciences -- Information Systems (hsv//eng)

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Systems engineering

Systemteknik

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