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Formation of carbon...
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Ayedh, H. M.
(författare)
Formation of carbon vacancy in 4H silicon carbide during high-temperature processing
- Artikel/kapitelEngelska2014
Förlag, utgivningsår, omfång ...
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AIP Publishing,2014
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printrdacarrier
Nummerbeteckningar
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LIBRIS-ID:oai:DiVA.org:kth-141062
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-141062URI
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https://doi.org/10.1063/1.4837996DOI
Kompletterande språkuppgifter
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Språk:engelska
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Sammanfattning på:engelska
Ingår i deldatabas
Klassifikation
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Ämneskategori:ref swepub-contenttype
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Ämneskategori:art swepub-publicationtype
Anmärkningar
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QC 20140210
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As-grown and pre-oxidized silicon carbide (SiC) samples of polytype 4H have been annealed at temperatures up to 1950 degrees C for 10 min duration using inductive heating, or at 2000 degrees C for 30 s using microwave heating. The samples consisted of a n-type high-purity epitaxial layer grown on 4 degrees off-axis < 0001 > n(+)-substrate and the evolution of the carbon vacancy (V-C) concentration in the epitaxial layer was monitored by deep level transient spectroscopy via the characteristic Z(1/2) peak. Z(1/2) appears at similar to 0.7 eV below the conduction band edge and arises from the doubly negative charge state of V-C. The concentration of V-C increases strongly after treatment at temperatures >= 1600 degrees C and it reaches almost 10(15)cm(-3) after the inductive heating at 1950 degrees C. A formation enthalpy of similar to 5.0 eV is deduced for V-C, in close agreement with recent theoretical predictions in the literature, and the entropy factor is found to be similar to 5 k (k denotes Boltzmann's constant). The latter value indicates substantial lattice relaxation around V-C, consistent with V-C being a negative-U system exhibiting considerable Jahn-Teller distortion. The microwave heated samples show evidence of non-equilibrium conditions due to the short duration used and display a lower content of V-C than the inductively heated ones. Finally, concentration-versus-depth profiles of V-C favour formation in the "bulk" of the epitaxial layer as the prevailing process and not a Schottky type process at the surface.
Ämnesord och genrebeteckningar
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4H silicon carbide
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Boltzmann's constant
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Conduction band edge
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Formation enthalpy
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High-temperature processing
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Lattice relaxation
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Nonequilibrium conditions
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Silicon carbides (SiC)
Biuppslag (personer, institutioner, konferenser, titlar ...)
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Bobal, V.
(författare)
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Nipoti, R.
(författare)
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Hallén, AndersKTH,Integrerade komponenter och kretsar(Swepub:kth)u11ywmz1
(författare)
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Svensson, B. G.
(författare)
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KTHIntegrerade komponenter och kretsar
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:Journal of Applied Physics: AIP Publishing115:1, s. 012005-0021-89791089-7550
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