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NiSi integration in...
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Haralson, ErikKTH,Mikroelektronik och Informationsteknik, IMIT
(author)
NiSi integration in a non-selective base SiGeCHBT process
- Article/chapterEnglish2005
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Elsevier BV,2005
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Numbers
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LIBRIS-ID:oai:DiVA.org:kth-14539
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-14539URI
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https://doi.org/10.1016/j.mssp.2004.09.024DOI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20100525 QC 20111012. 2nd International SiGe Technology and Device Meeting (ISTDM). Frankfurt, GERMANY. MAY 16-19, 2004
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A self-aligned nickel silicide (salicide) process is integrated into a non-selective base SiGeC HBT process. The device features a unique, fully silicided base region that grows laterally under the emitter pedestal. This Ni(SiGe) formed in this base region was found to have a resistivity of 23-24 muOmega cm. A difference in the silicide thickness between the boron-doped SiGeC extrinsic base region and the in situ phosphorous-doped emitter region is observed and further analyzed and confirmed with a blanket wafer silicide study. The silicided device exhibited a current gain of 64 and HF device performance of 39 and 32 GHz for f(t) and f(MAX), respectively.
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Suvar, E.KTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u1sxan4r
(author)
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Malm, B. GunnarKTH,Integrerade komponenter och kretsar(Swepub:kth)u13lag9j
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Radamson, HenryKTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u1g2cqgr
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Wang, Yong-BinKTH,Integrerade komponenter och kretsar(Swepub:kth)u1mxfvwt
(author)
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Östling, MikaelKTH,Integrerade komponenter och kretsar(Swepub:kth)u1u0kle4
(author)
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KTHMikroelektronik och Informationsteknik, IMIT
(creator_code:org_t)
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In:Materials Science in Semiconductor Processing: Elsevier BV8:03-jan, s. 245-2481369-80011873-4081
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